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PD-94044
SMPS MOSFET
Applications l High frequency DC-DC converters
IRF5801
HEXFET(R) Power MOSFET
VDSS
200V
RDS(on) max
2.2
ID
0.6A
Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
l
D
1
6
A D
D
2
5
D
G
3
4
S
T op V iew
TSOP-6
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
0.6 0.48 4.8 2.0 0.016 30 9.6 -55 to + 150 300 (1.6mm from case )
Units
A W W/C V V/ns C
Thermal Resistance
Symbol
RJA
Parameter
Junction-to-Ambient
Typ.
---
Max.
62.5
Units
C/W
Notes through are on page 8
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01/17/01
IRF5801
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 --- --- 3.0 --- --- --- --- Typ. --- 0.26 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 2.2 VGS = 10V, ID = 0.36A 5.5 V VDS = VGS, ID = 250A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units Conditions 0.44 --- --- S VDS = 50V, ID = 0.36A --- 3.9 --- ID = 0.36A --- 0.8 --- nC VDS = 160V --- 2.2 --- VGS = 10V --- 6.5 --- VDD = 100V --- 8.0 --- ID = 0.36A ns --- 8.8 --- RG = 53 --- 19 --- VGS = 10V --- 88 --- VGS = 0V --- 18 --- VDS = 25V --- 6.3 --- pF = 1.0MHz --- 102 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- 8.4 --- VGS = 0V, VDS = 160V, = 1.0MHz --- 26 --- VGS = 0V, VDS = 0V to 160V
Avalanche Characteristics
Parameter
EAS IAR Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
9.9 0.6
Units
mJ A
Diode Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 45 54 1.8 A 4.8 1.3 --- --- V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 0.36A, VGS = 0V TJ = 25C, I F = 0.36A di/dt = 100A/s
D
S
2
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IRF5801
10
VGS 15.0V 12.0V 10.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP
10
ID, Drain-to-Source Current (A)
1
ID, Drain-to-Source Current (A)
1
VGS 15.0V 12.0V 10.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP
6.0V
6.0V
0.1
0.1
20s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100 0.01 0.1 1
20s PULSE WIDTH Tj = 150C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
3.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 0.6A
I D , Drain-to-Source Current (A)
2.5
TJ = 150 C
2.0
1
1.5
TJ = 25 C
1.0
0.5
0.1 6 7 8 9
V DS = 50V 20s PULSE WIDTH 10 11 12
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF5801
160
20
VGS , Gate-to-Source Voltage (V)
C, Capacitance(pF)
120
V GS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
ID = 0.36A
16
V DS= 160V V DS= 100V V DS= 40V
Ciss
80
12
8
40
Coss Crss
4
0 1 10 100 1000
0 0 1 2 3 4 5
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
ID , Drain Current (A)
10
TJ = 150 C
1
10us 1 100us 1ms 0.1 10ms
TJ = 25 C
0.1 0.4
V GS = 0 V
0.5 0.6 0.7 0.8 0.9 1.0
0.01 1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF5801
0.6
VDS VGS RG
RD
0.5
D.U.T.
+
ID , Drain Current (A)
0.4
-VDD
10V
0.3
Pulse Width 1 s Duty Factor 0.1 %
0.2
Fig 10a. Switching Time Test Circuit
VDS 90%
0.1
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJC )
D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.1 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T = P DM x ZthJC + TC J 0.0001 0.001 0.01 0.1 1 10
PDM t1 t2 100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF5801
RDS ( on ) , Drain-to-Source On Resistance ( )
10.000
( RDS(on), Drain-to -Source On Resistance )
12.000
2.500
2.250
8.000 VGS = 10V 6.000
2.000
4.000
ID = 0.6A
1.750
2.000
0.000 0 1 2 3 4 5 ID , Drain Current ( A )
1.500 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
VG
EAS , Single Pulse Avalanche Energy (mJ)
25
VGS
3mA
Charge
IG ID
20
TOP BOTTOM ID 0.4A 0.7A 0.9A
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
15
10
15V
5
V (B R )D S S tp VD S L DRIVER
0 25 50 75 100 125 150
RG 20 V IAS tp
D.U .T IA S 0.0 1
+ V - DD
A
Starting T J , Junction Temperature ( C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF5801
TSOP-6 Package Outline
TSOP-6 Part Marking Information
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7
IRF5801
TSOP-6 Tape & Reel Information
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t < 10sec. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Starting TJ = 25C, L = 27mH
RG = 25, IAS = 0.36A.
Pulse width 400s; duty cycle 2%.
ISD 0.36A, di/dt 93A/s, VDD V(BR)DSS, TJ 150C.
Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/00
8
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